Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity

M. Baciocchi; E. Di Fabrizio; M. Gentili; L. Grella; L. Maggiora; L. Mastrogiacomo; D. Peschiaroli; S. Choi; Y. J. Jeon; H. B. Chung; H. J. Yoo

doi:10.1016/0167-9317(95)00225-1

Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity

M. Baciocchi^*, E. Di Fabrizio, M. Gentili, L. Grella, L. Maggiora, L. Mastrogiacomo, D. Peschiaroli, S. Choi, Y. J. Jeon, H. B. Chung, H. J. Yoo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

40k V electron beam lithography has been used to pattern gold plated x-ray masks containing GBit DRAM complexity layouts. The two commercial e-beam resists used, namely PMMA and SAL 601, both showed 0.12 μm resolution capability in dense and large layouts patterning and also, under optimised exposure and development conditions, exhibited good exposure latitudes which were also evaluated for two different beam spot sizes. Furthermore, a study of development technique and effect of e-beam spot size indicated a marked dependence of ultimate resolution and exposure latitude on such parameters. A statistical analysis of 0.12 μm resolution SAL patterning on large chip dies (30 × 30 mm²) resulted in a dimensional control of 10 nm (3σ value).

Original language	English (US)
Pages (from-to)	195-198
Number of pages	4
Journal	Microelectronic Engineering
Volume	30
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(95)00225-1
State	Published - Jan 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(95)00225-1

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title = "Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity",

abstract = "40k V electron beam lithography has been used to pattern gold plated x-ray masks containing GBit DRAM complexity layouts. The two commercial e-beam resists used, namely PMMA and SAL 601, both showed 0.12 μm resolution capability in dense and large layouts patterning and also, under optimised exposure and development conditions, exhibited good exposure latitudes which were also evaluated for two different beam spot sizes. Furthermore, a study of development technique and effect of e-beam spot size indicated a marked dependence of ultimate resolution and exposure latitude on such parameters. A statistical analysis of 0.12 μm resolution SAL patterning on large chip dies (30 × 30 mm2) resulted in a dimensional control of 10 nm (3σ value).",

author = "M. Baciocchi and {Di Fabrizio}, E. and M. Gentili and L. Grella and L. Maggiora and L. Mastrogiacomo and D. Peschiaroli and S. Choi and Jeon, {Y. J.} and Chung, {H. B.} and Yoo, {H. J.}",

year = "1996",

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doi = "10.1016/0167-9317(95)00225-1",

language = "English (US)",

volume = "30",

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journal = "Microelectronic Engineering",

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T1 - Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity

AU - Baciocchi, M.

AU - Di Fabrizio, E.

AU - Gentili, M.

AU - Grella, L.

AU - Maggiora, L.

AU - Mastrogiacomo, L.

AU - Peschiaroli, D.

AU - Choi, S.

AU - Jeon, Y. J.

AU - Chung, H. B.

AU - Yoo, H. J.

PY - 1996/1

Y1 - 1996/1

N2 - 40k V electron beam lithography has been used to pattern gold plated x-ray masks containing GBit DRAM complexity layouts. The two commercial e-beam resists used, namely PMMA and SAL 601, both showed 0.12 μm resolution capability in dense and large layouts patterning and also, under optimised exposure and development conditions, exhibited good exposure latitudes which were also evaluated for two different beam spot sizes. Furthermore, a study of development technique and effect of e-beam spot size indicated a marked dependence of ultimate resolution and exposure latitude on such parameters. A statistical analysis of 0.12 μm resolution SAL patterning on large chip dies (30 × 30 mm2) resulted in a dimensional control of 10 nm (3σ value).

AB - 40k V electron beam lithography has been used to pattern gold plated x-ray masks containing GBit DRAM complexity layouts. The two commercial e-beam resists used, namely PMMA and SAL 601, both showed 0.12 μm resolution capability in dense and large layouts patterning and also, under optimised exposure and development conditions, exhibited good exposure latitudes which were also evaluated for two different beam spot sizes. Furthermore, a study of development technique and effect of e-beam spot size indicated a marked dependence of ultimate resolution and exposure latitude on such parameters. A statistical analysis of 0.12 μm resolution SAL patterning on large chip dies (30 × 30 mm2) resulted in a dimensional control of 10 nm (3σ value).

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U2 - 10.1016/0167-9317(95)00225-1

DO - 10.1016/0167-9317(95)00225-1

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SN - 0167-9317

VL - 30

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity

Abstract

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