Exposure of thick polymethylglutarimide films for structural MEMS

Ian Grant Foulds; R. W. Johnstone; S. H. Tsang; M. Parameswaran

doi:10.1149/1.2357270

Exposure of thick polymethylglutarimide films for structural MEMS

Ian Grant Foulds^*, R. W. Johnstone, S. H. Tsang, M. Parameswaran

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Polymethylglutarimide (PMGI) based resists are commercially available resists intended for use in bilayer lift-off applications. Literature on exposure and development of PMGI films is restricted to films less than 2.5μm in thickness, and limited to using tetramethylammonium hydroxide (TMAH) based developers. This paper investigates the exposure and development of PMGI thick films greater than 6μm in thickness using both TMAH and tetraethylammonium hydroxide (TEAM) based developers. At this thickness, the absorption of the PMGI leads to non-uniform doses through the film, and so creates large gradients in the dissolution properties. Etch rates as a function of surface dose and development time are reported in this paper. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	299-306
Number of pages	8
Journal	ECS Transactions
Volume	3
Issue number	10
DOIs	https://doi.org/10.1149/1.2357270
State	Published - Dec 1 2006
Event	Chemical Sensors 7 -and- MEMS/NEMS 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

ASJC Scopus subject areas

Engineering(all)

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title = "Exposure of thick polymethylglutarimide films for structural MEMS",

abstract = "Polymethylglutarimide (PMGI) based resists are commercially available resists intended for use in bilayer lift-off applications. Literature on exposure and development of PMGI films is restricted to films less than 2.5μm in thickness, and limited to using tetramethylammonium hydroxide (TMAH) based developers. This paper investigates the exposure and development of PMGI thick films greater than 6μm in thickness using both TMAH and tetraethylammonium hydroxide (TEAM) based developers. At this thickness, the absorption of the PMGI leads to non-uniform doses through the film, and so creates large gradients in the dissolution properties. Etch rates as a function of surface dose and development time are reported in this paper. copyright The Electrochemical Society.",

author = "Foulds, {Ian Grant} and Johnstone, {R. W.} and Tsang, {S. H.} and M. Parameswaran",

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T1 - Exposure of thick polymethylglutarimide films for structural MEMS

AU - Foulds, Ian Grant

AU - Johnstone, R. W.

AU - Tsang, S. H.

AU - Parameswaran, M.

PY - 2006/12/1

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N2 - Polymethylglutarimide (PMGI) based resists are commercially available resists intended for use in bilayer lift-off applications. Literature on exposure and development of PMGI films is restricted to films less than 2.5μm in thickness, and limited to using tetramethylammonium hydroxide (TMAH) based developers. This paper investigates the exposure and development of PMGI thick films greater than 6μm in thickness using both TMAH and tetraethylammonium hydroxide (TEAM) based developers. At this thickness, the absorption of the PMGI leads to non-uniform doses through the film, and so creates large gradients in the dissolution properties. Etch rates as a function of surface dose and development time are reported in this paper. copyright The Electrochemical Society.

AB - Polymethylglutarimide (PMGI) based resists are commercially available resists intended for use in bilayer lift-off applications. Literature on exposure and development of PMGI films is restricted to films less than 2.5μm in thickness, and limited to using tetramethylammonium hydroxide (TMAH) based developers. This paper investigates the exposure and development of PMGI thick films greater than 6μm in thickness using both TMAH and tetraethylammonium hydroxide (TEAM) based developers. At this thickness, the absorption of the PMGI leads to non-uniform doses through the film, and so creates large gradients in the dissolution properties. Etch rates as a function of surface dose and development time are reported in this paper. copyright The Electrochemical Society.

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DO - 10.1149/1.2357270

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ER -

Exposure of thick polymethylglutarimide films for structural MEMS

Abstract

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