Abstract
We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ∼20 times higher injection levels (∼275 A/cm2) compared to a conventional step-MQWs microLED (∼14 A/cm2).
Original language | English (US) |
---|---|
Title of host publication | 2014 IEEE Photonics Conference |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 22-23 |
Number of pages | 2 |
ISBN (Print) | 9781457715044 |
DOIs | |
State | Published - Dec 2014 |