## Abstract

The extraordinary Hall effect (EHE) in ferromagnetic samples is generally attributed to scatterings of iterant electrons in the presence of spin-orbit interactions. In this work, our study of the thickness dependence of the EHE in the (Ni_{80}Fe_{20})_{x}(SiO_{2})_{1-x} system showed the spontaneous Hall resistivity, ρ_{xy}^{S} to be quite independent of the film thickness while the Hall coefficient, R _{s} (≡ρ_{xy}^{S}/M_{S}, where M _{S} is the saturated magnetization), increased monotonically owing to a depression in M_{S}. We point out that the independence of ρ_{xy}^{S} with reducing thickness could arise if the morphological structure of the sample becomes two dimensional with decreasing film thickness, which is expected from classical percolation theory. We also find in the (Ni_{80}Fe_{20})_{x}(SiO_{2}) _{1-x} system (with varying x) that ρ_{xy}^{S} ^{∝}ρ_{xx}^{γ} where γ=0.53, which disagrees with the value of 2 frequently attributed to the side jump effect, but which can be explained in terms of the more general form ρ _{xy}^{S}=ρ_{xx}Δ_{ye}/ Λ_{SO}, where Δ_{ye} is the side jump displacement and Λ_{SO} is the spin-orbit mean free path.

Original language | English (US) |
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Journal | Physical Review B - Condensed Matter and Materials Physics |

Volume | 70 |

Issue number | 22 |

DOIs | |

State | Published - Dec 1 2004 |

## ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

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