TY - JOUR
T1 - Extraordinary magnetoresistance in semiconductor/metal hybrids: A review
AU - Sun, Jian
AU - Kosel, Jürgen
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/2/13
Y1 - 2013/2/13
N2 - The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device's performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.
AB - The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device's performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.
UR - http://hdl.handle.net/10754/334645
UR - http://www.mdpi.com/1996-1944/6/2/500
UR - http://www.scopus.com/inward/record.url?scp=84875772876&partnerID=8YFLogxK
U2 - 10.3390/ma6020500
DO - 10.3390/ma6020500
M3 - Article
C2 - 28809321
SN - 1996-1944
VL - 6
SP - 500
EP - 516
JO - Materials
JF - Materials
IS - 2
ER -