Extreme ultraviolet resist materials for sub-7 nm patterning

Li Li; Xuan Liu; Shyam Pal; Shulan Wang; Christopher K. Ober; Emmanuel P. Giannelis

doi:10.1039/c7cs00080d

Extreme ultraviolet resist materials for sub-7 nm patterning

Li Li, Xuan Liu, Shyam Pal, Shulan Wang, Christopher K. Ober, Emmanuel P. Giannelis

Research output: Contribution to journal › Article › peer-review

268 Scopus citations

Abstract

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

Original language	English (US)
Pages (from-to)	4855-4866
Number of pages	12
Journal	Chem. Soc. Rev.
Volume	46
Issue number	16
DOIs	https://doi.org/10.1039/c7cs00080d
State	Published - 2017
Externally published	Yes

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10.1039/c7cs00080d

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title = "Extreme ultraviolet resist materials for sub-7 nm patterning",

abstract = "Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.",

author = "Li Li and Xuan Liu and Shyam Pal and Shulan Wang and Ober, {Christopher K.} and Giannelis, {Emmanuel P.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2017",

doi = "10.1039/c7cs00080d",

language = "English (US)",

volume = "46",

pages = "4855--4866",

journal = "Chem. Soc. Rev.",

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publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Extreme ultraviolet resist materials for sub-7 nm patterning

AU - Li, Li

AU - Liu, Xuan

AU - Pal, Shyam

AU - Wang, Shulan

AU - Ober, Christopher K.

AU - Giannelis, Emmanuel P.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2017

Y1 - 2017

N2 - Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

AB - Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

UR - http://hdl.handle.net/10754/625795

UR - http://xlink.rsc.org/?DOI=C7CS00080D

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U2 - 10.1039/c7cs00080d

DO - 10.1039/c7cs00080d

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VL - 46

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EP - 4866

JO - Chem. Soc. Rev.

JF - Chem. Soc. Rev.

IS - 16

ER -

Extreme ultraviolet resist materials for sub-7 nm patterning

Abstract

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