Extreme ultraviolet resist materials for sub-7 nm patterning

Li Li, Xuan Liu, Shyam Pal, Shulan Wang, Christopher K. Ober, Emmanuel P. Giannelis

Research output: Contribution to journalArticlepeer-review

201 Scopus citations


Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
Original languageEnglish (US)
Pages (from-to)4855-4866
Number of pages12
JournalChem. Soc. Rev.
Issue number16
StatePublished - 2017
Externally publishedYes


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