Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N

Toru Sugiyama; Daisuke Iida; Toshiki Yasuda; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

doi:10.7567/APEX.6.121002

Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N

Toru Sugiyama, Daisuke Iida, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We discovered that Si-doped Al0.05Ga0.95N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7 × 10-3 Ωcm with a carrier concentration of 4.0 × 1019 cm-3 was almost saturated. In contrast, Si-doped Al0.05Ga0.95N with a minimum resistivity of 5.9 × 10-4 Ωcm was produced with an electron concentration and electron mobility of 1.4 × 1020 cm-3 and 70 cm2/Vs, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al0.05Ga0.95N. © 2013 The Japan Society of Applied Physics.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
Volume	6
Issue number	12
DOIs	https://doi.org/10.7567/APEX.6.121002
State	Published - Dec 1 2013
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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@article{5116e28e12854b16a17bb8e54d742f04,

title = "Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N",

abstract = "We discovered that Si-doped Al0.05Ga0.95N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7 × 10-3 Ωcm with a carrier concentration of 4.0 × 1019 cm-3 was almost saturated. In contrast, Si-doped Al0.05Ga0.95N with a minimum resistivity of 5.9 × 10-4 Ωcm was produced with an electron concentration and electron mobility of 1.4 × 1020 cm-3 and 70 cm2/Vs, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al0.05Ga0.95N. {\textcopyright} 2013 The Japan Society of Applied Physics.",

author = "Toru Sugiyama and Daisuke Iida and Toshiki Yasuda and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2013",

month = dec,

day = "1",

doi = "10.7567/APEX.6.121002",

language = "English (US)",

volume = "6",

journal = "APPLIED PHYSICS EXPRESS",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N

AU - Sugiyama, Toru

AU - Iida, Daisuke

AU - Yasuda, Toshiki

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2013/12/1

Y1 - 2013/12/1

N2 - We discovered that Si-doped Al0.05Ga0.95N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7 × 10-3 Ωcm with a carrier concentration of 4.0 × 1019 cm-3 was almost saturated. In contrast, Si-doped Al0.05Ga0.95N with a minimum resistivity of 5.9 × 10-4 Ωcm was produced with an electron concentration and electron mobility of 1.4 × 1020 cm-3 and 70 cm2/Vs, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al0.05Ga0.95N. © 2013 The Japan Society of Applied Physics.

AB - We discovered that Si-doped Al0.05Ga0.95N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7 × 10-3 Ωcm with a carrier concentration of 4.0 × 1019 cm-3 was almost saturated. In contrast, Si-doped Al0.05Ga0.95N with a minimum resistivity of 5.9 × 10-4 Ωcm was produced with an electron concentration and electron mobility of 1.4 × 1020 cm-3 and 70 cm2/Vs, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al0.05Ga0.95N. © 2013 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.7567/APEX.6.121002

UR - http://www.scopus.com/inward/record.url?scp=84890581524&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.121002

DO - 10.7567/APEX.6.121002

M3 - Article

SN - 1882-0778

VL - 6

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 12

ER -

Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N

Abstract

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