Extremely low-resistivity and high-carrier-concentration Si-doped Al0.05Ga0.95N

Toru Sugiyama, Daisuke Iida, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

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Engineering

Physics

Material Science