Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

Motoaki Iwaya, Daisuke Iida, Kunihiro Takeda, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Material Science

Chemical Engineering