Abstract
Nano-aperture vertical-cavity surface-emitting lasers were fabricated on common 850 nm VCSELs. When the size of the aperture was 400 nm × 400 nm, the maximum far-field output power reached 0.3 mW at a driving current of 25 mA, and the power density was about 2 mW/μm2. The fabrication process is introduced here. Spectra and lifetime characteristics of the devices are also analyzed.
Original language | English (US) |
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Pages (from-to) | 265-268 |
Number of pages | 4 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 28 |
Issue number | 2 |
State | Published - Feb 1 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics