TY - JOUR
T1 - Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks
AU - Fuentes-Fernandez, E. M A
AU - Debray-Mechtaly, W.
AU - Quevedo-López, Manuel Angel Quevedo
AU - Gnade, Bruce E.
AU - Rajasekaran, Arvindh
AU - Hande, Abhiman
AU - Shah, Pradeep
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.
PY - 2010/11/18
Y1 - 2010/11/18
N2 - 0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
AB - 0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
UR - http://hdl.handle.net/10754/561593
UR - http://link.springer.com/10.1007/s11664-010-1407-x
UR - http://www.scopus.com/inward/record.url?scp=78650724135&partnerID=8YFLogxK
U2 - 10.1007/s11664-010-1407-x
DO - 10.1007/s11664-010-1407-x
M3 - Article
SN - 0361-5235
VL - 40
SP - 85
EP - 91
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 1
ER -