Abstract
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single-quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2μm) and a gain factor of 0.095 cmμm/A were obtained. The optical gain will be improved by lowering the dislocation density in the laser structure.
Original language | English (US) |
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Pages | 468-475 |
Number of pages | 8 |
DOIs | |
State | Published - 1993 |
Event | Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993 |
Conference
Conference | Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 |
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Country/Territory | Italy |
City | Trieste |
Period | 05/23/93 → 05/28/93 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering