Abstract
We report the enhancement of light extraction efficiency of InGaN-based blue light emitting diodes by using a surface light-scattering layer. A number of SiO2 microspheres embedded into a ZrO2 thin layer played a role of a light-scattering medium. Coating the light-scattering layer on device surface, the interference fringes of electroluminescence (EL) spectra were eliminated and the EL intensity around 440-450 nm was increased by a factor of 1.3.
Original language | English (US) |
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Pages (from-to) | 25-28 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 1 |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
Event | 6th International Symposium on Blue Laser and Light Emitting Diodes, ISBLLED 2006 - Montpellier, France Duration: May 15 2006 → May 19 2006 |
ASJC Scopus subject areas
- Condensed Matter Physics