Fabrication and properties of B-N codoped p-type ZnO thin films

Y. R. Sui; B. Yao; Z. Hua; G. Z. Xing; X. M. Huang; T. Yang; L. L. Gao; T. T. Zhao; H. L. Pan; H. Zhu; W. W. Liu; T. Wu

doi:10.1088/0022-3727/42/6/065101

Fabrication and properties of B-N codoped p-type ZnO thin films

Y. R. Sui, B. Yao^*, Z. Hua, G. Z. Xing, X. M. Huang, T. Yang, L. L. Gao, T. T. Zhao, H. L. Pan, H. Zhu, W. W. Liu, T. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Ω cm, Hall mobility of 11 cm² V^-1 s^-1 and carrier concentration of 1.2 × 10¹⁷ cm^-3, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.

Original language	English (US)
Article number	065101
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/42/6/065101
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/42/6/065101

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@article{04a743b454174550bddf33ad1bb8aab7,

title = "Fabrication and properties of B-N codoped p-type ZnO thin films",

abstract = "A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Ω cm, Hall mobility of 11 cm2 V-1 s-1 and carrier concentration of 1.2 × 1017 cm-3, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.",

author = "Sui, {Y. R.} and B. Yao and Z. Hua and Xing, {G. Z.} and Huang, {X. M.} and T. Yang and Gao, {L. L.} and Zhao, {T. T.} and Pan, {H. L.} and H. Zhu and Liu, {W. W.} and T. Wu",

year = "2009",

doi = "10.1088/0022-3727/42/6/065101",

language = "English (US)",

volume = "42",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "6",

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TY - JOUR

T1 - Fabrication and properties of B-N codoped p-type ZnO thin films

AU - Sui, Y. R.

AU - Yao, B.

AU - Hua, Z.

AU - Xing, G. Z.

AU - Huang, X. M.

AU - Yang, T.

AU - Gao, L. L.

AU - Zhao, T. T.

AU - Pan, H. L.

AU - Zhu, H.

AU - Liu, W. W.

AU - Wu, T.

PY - 2009

Y1 - 2009

N2 - A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Ω cm, Hall mobility of 11 cm2 V-1 s-1 and carrier concentration of 1.2 × 1017 cm-3, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.

AB - A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Ω cm, Hall mobility of 11 cm2 V-1 s-1 and carrier concentration of 1.2 × 1017 cm-3, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.

UR - http://www.scopus.com/inward/record.url?scp=63649104768&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/6/065101

DO - 10.1088/0022-3727/42/6/065101

M3 - Article

AN - SCOPUS:63649104768

SN - 0022-3727

VL - 42

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 6

M1 - 065101

ER -

Fabrication and properties of B-N codoped p-type ZnO thin films

Abstract

ASJC Scopus subject areas

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