Fabrication of 5 nm resolution electrodes for molecular devices by means of electron beam lithography

Enzo Di Fabrizio; Luca Grella; Massimo Gentili; Marco Baciocchi; Luigi Mastrogiacomo; Piero Morales

doi:10.1143/jjap.36.l70

Fabrication of 5 nm resolution electrodes for molecular devices by means of electron beam lithography

Enzo Di Fabrizio^*, Luca Grella, Massimo Gentili, Marco Baciocchi, Luigi Mastrogiacomo, Piero Morales

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Electron beam lithography is used to fabricate two-metal electrode tip-shaped structures. The distance between the tips is continuously controlled to be between 5 and 70 nm. The electron beam lithography process is robust and the tip separation is well controlled in the sense that the smallest distance between the tips is a consequence of the design and not a consequence of randomly distributed metal spots around the tip area. Interest in these structures is due to the fact that they can be used to fabricate rectifiers, working with single molecule, designed to exhibit semiconductor properties.

Original language	English (US)
Pages (from-to)	L70-L72
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	1 PART A/B
DOIs	https://doi.org/10.1143/jjap.36.l70
State	Published - Jan 15 1997
Externally published	Yes

Keywords

Electron beam lithography
High aspect ratio
Molecular device
PMMA
Rectifier
Resist adhesion

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.36.l70

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@article{5b5af733878a401d85489426802c8dee,

title = "Fabrication of 5 nm resolution electrodes for molecular devices by means of electron beam lithography",

abstract = "Electron beam lithography is used to fabricate two-metal electrode tip-shaped structures. The distance between the tips is continuously controlled to be between 5 and 70 nm. The electron beam lithography process is robust and the tip separation is well controlled in the sense that the smallest distance between the tips is a consequence of the design and not a consequence of randomly distributed metal spots around the tip area. Interest in these structures is due to the fact that they can be used to fabricate rectifiers, working with single molecule, designed to exhibit semiconductor properties.",

keywords = "Electron beam lithography, High aspect ratio, Molecular device, PMMA, Rectifier, Resist adhesion",

author = "{Di Fabrizio}, Enzo and Luca Grella and Massimo Gentili and Marco Baciocchi and Luigi Mastrogiacomo and Piero Morales",

year = "1997",

month = jan,

day = "15",

doi = "10.1143/jjap.36.l70",

language = "English (US)",

volume = "36",

pages = "L70--L72",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 PART A/B",

}

TY - JOUR

T1 - Fabrication of 5 nm resolution electrodes for molecular devices by means of electron beam lithography

AU - Di Fabrizio, Enzo

AU - Grella, Luca

AU - Gentili, Massimo

AU - Baciocchi, Marco

AU - Mastrogiacomo, Luigi

AU - Morales, Piero

PY - 1997/1/15

Y1 - 1997/1/15

N2 - Electron beam lithography is used to fabricate two-metal electrode tip-shaped structures. The distance between the tips is continuously controlled to be between 5 and 70 nm. The electron beam lithography process is robust and the tip separation is well controlled in the sense that the smallest distance between the tips is a consequence of the design and not a consequence of randomly distributed metal spots around the tip area. Interest in these structures is due to the fact that they can be used to fabricate rectifiers, working with single molecule, designed to exhibit semiconductor properties.

AB - Electron beam lithography is used to fabricate two-metal electrode tip-shaped structures. The distance between the tips is continuously controlled to be between 5 and 70 nm. The electron beam lithography process is robust and the tip separation is well controlled in the sense that the smallest distance between the tips is a consequence of the design and not a consequence of randomly distributed metal spots around the tip area. Interest in these structures is due to the fact that they can be used to fabricate rectifiers, working with single molecule, designed to exhibit semiconductor properties.

KW - Electron beam lithography

KW - High aspect ratio

KW - Molecular device

KW - PMMA

KW - Rectifier

KW - Resist adhesion

UR - http://www.scopus.com/inward/record.url?scp=0030716536&partnerID=8YFLogxK

U2 - 10.1143/jjap.36.l70

DO - 10.1143/jjap.36.l70

M3 - Article

AN - SCOPUS:0030716536

SN - 0021-4922

VL - 36

SP - L70-L72

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 1 PART A/B

ER -

Fabrication of 5 nm resolution electrodes for molecular devices by means of electron beam lithography

Abstract

Keywords

ASJC Scopus subject areas

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