Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Jingqi Li; Qing Zhang; Dajiang Yang; Jingze Tian

doi:10.1016/j.carbon.2004.05.002

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Jingqi Li^*, Qing Zhang, Dajiang Yang, Jingze Tian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

139 Scopus citations

Abstract

Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on-off ratio of up to 7×10⁵ have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.

Original language	English (US)
Pages (from-to)	2263-2267
Number of pages	5
Journal	Carbon
Volume	42
Issue number	11
DOIs	https://doi.org/10.1016/j.carbon.2004.05.002
State	Published - 2004
Externally published	Yes

Keywords

A. Carbon nanotubes
C. Atomic force microscopy
D. Electrical (electronic) properties

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2004.05.002

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title = "Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method",

abstract = "Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on-off ratio of up to 7×105 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.",

keywords = "A. Carbon nanotubes, C. Atomic force microscopy, D. Electrical (electronic) properties",

author = "Jingqi Li and Qing Zhang and Dajiang Yang and Jingze Tian",

year = "2004",

doi = "10.1016/j.carbon.2004.05.002",

language = "English (US)",

volume = "42",

pages = "2263--2267",

journal = "Carbon",

issn = "0008-6223",

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TY - JOUR

T1 - Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

AU - Li, Jingqi

AU - Zhang, Qing

AU - Yang, Dajiang

AU - Tian, Jingze

PY - 2004

Y1 - 2004

N2 - Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on-off ratio of up to 7×105 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.

AB - Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on-off ratio of up to 7×105 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.

KW - A. Carbon nanotubes

KW - C. Atomic force microscopy

KW - D. Electrical (electronic) properties

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U2 - 10.1016/j.carbon.2004.05.002

DO - 10.1016/j.carbon.2004.05.002

M3 - Article

AN - SCOPUS:3142740412

SN - 0008-6223

VL - 42

SP - 2263

EP - 2267

JO - Carbon

JF - Carbon

IS - 11

ER -

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Abstract

Keywords

ASJC Scopus subject areas

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