TY - GEN
T1 - Fabrication of dimension-tunable Si nanopillar arrays with antireflection and self-cleaning properties
AU - Lin, Yi Ruei
AU - He, Hau
PY - 2010
Y1 - 2010
N2 - In the present work, the SWSs combining AR and enhanced hydrophobic effects was reported. A simple method, which combines sub-wavelength-scale monolayer spheres with a reactive ion etching process, to fabricate AR structures of Si nanorod arrays (NRAs) was used. Spectral reflectance measurements of Si substrates with NRA SWSs showed drastic reduction in reflection over a broad range of wavelengths and a wide range of angle of incidence, demonstrating its ability to broadband and omnidirectional antireflection. The reflectivity and the wettability as a function of diameter, height, of Si NWAs were discussed.
AB - In the present work, the SWSs combining AR and enhanced hydrophobic effects was reported. A simple method, which combines sub-wavelength-scale monolayer spheres with a reactive ion etching process, to fabricate AR structures of Si nanorod arrays (NRAs) was used. Spectral reflectance measurements of Si substrates with NRA SWSs showed drastic reduction in reflection over a broad range of wavelengths and a wide range of angle of incidence, demonstrating its ability to broadband and omnidirectional antireflection. The reflectivity and the wettability as a function of diameter, height, of Si NWAs were discussed.
UR - http://www.scopus.com/inward/record.url?scp=77951658702&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424973
DO - 10.1109/INEC.2010.5424973
M3 - Conference contribution
AN - SCOPUS:77951658702
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 515
EP - 516
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -