Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

H. M. Wang; Z. Zheng; Y. Y. Wang; J. J. Qiu; Zaibing Guo; Z. X. Shen; T. Yu

doi:10.1063/1.3291110

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

H. M. Wang, Z. Zheng, Y. Y. Wang, J. J. Qiu, Zaibing Guo, Z. X. Shen, T. Yu

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Abstract

We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO₂ /Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage (I-V) characteristics are governed by the space-charge-limited flow of current at low biases while the Fowler-Nordheim model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.

Original language	English (US)
Article number	023106
Journal	Applied Physics Letters
Volume	96
Issue number	2
DOIs	https://doi.org/10.1063/1.3291110
State	Published - Jan 25 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2 /Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage (I-V) characteristics are governed by the space-charge-limited flow of current at low biases while the Fowler-Nordheim model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.",

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AU - Wang, H. M.

AU - Zheng, Z.

AU - Wang, Y. Y.

AU - Qiu, J. J.

AU - Guo, Zaibing

AU - Shen, Z. X.

AU - Yu, T.

PY - 2010/1/25

Y1 - 2010/1/25

N2 - We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2 /Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage (I-V) characteristics are governed by the space-charge-limited flow of current at low biases while the Fowler-Nordheim model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.

AB - We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2 /Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage (I-V) characteristics are governed by the space-charge-limited flow of current at low biases while the Fowler-Nordheim model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.

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Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

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