Fabrication of mesoscopic devices using atomic force macroscopic electric field induced oxidation

Predesigned antidot arrays with feature sizes ∼70 nm (width) X 10 nm (height) were fabricated on various materials, including aluminum, titanium, and silicon using AFM electric field induced oxidation and the selective wet etching technique. In addition, a procedure devised to fabricate gold structures by using an Al/PMMA/SiO_x trilayer was illustrated. Temperature dependence of electrical resistivity and Hall coefficient obtained at room temperature of an aluminum control sample exhibit good agreement with known results of aluminum in bulk. Furthermore, the temperature coefficient of the ρ-T data demonstrated a systematic decrease with decreasing metal fraction of the sample. Overall, measurement results illustrate reliability of the fabrication protocol developed for the sample and the contrast leads.