Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation

F. K. Lee; G. H. Wen; X. X. Zhang; O. K.C. Tsui

doi:10.1201/9780203390283

Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation

F. K. Lee, G. H. Wen, X. X. Zhang, O. K.C. Tsui^*

^*Corresponding author for this work

Material Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

We demonstrate the fabrication of mesoscopic devices on aluminum thin film by using atomic force microscopic (AFM) electric field induced oxidation together with selective wet etching. The device structure being demonstrated is a percolating network consisting of conducting dots (70 nm in diameter) randomly distributed within an area of 1 × 1 μm². Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between the temperature-dependent resistivity and Hall coefficient measurements of an aluminum control sample we made and those reported in the literature for bulk aluminum warrants reliability of our sample fabrication technique.

Original language	English (US)
Title of host publication	Nano Science and Technology
Subtitle of host publication	Novel Structures and Phenomena
Publisher	CRC Press
Pages	193-199
Number of pages	7
ISBN (Electronic)	9780203390283
ISBN (Print)	9780415308328
DOIs	https://doi.org/10.1201/9780203390283
State	Published - Jan 1 2003

ASJC Scopus subject areas

General Engineering

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title = "Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation",

abstract = "We demonstrate the fabrication of mesoscopic devices on aluminum thin film by using atomic force microscopic (AFM) electric field induced oxidation together with selective wet etching. The device structure being demonstrated is a percolating network consisting of conducting dots (70 nm in diameter) randomly distributed within an area of 1 × 1 μm2. Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between the temperature-dependent resistivity and Hall coefficient measurements of an aluminum control sample we made and those reported in the literature for bulk aluminum warrants reliability of our sample fabrication technique.",

author = "Lee, {F. K.} and Wen, {G. H.} and Zhang, {X. X.} and Tsui, {O. K.C.}",

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T1 - Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation

AU - Lee, F. K.

AU - Wen, G. H.

AU - Zhang, X. X.

AU - Tsui, O. K.C.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We demonstrate the fabrication of mesoscopic devices on aluminum thin film by using atomic force microscopic (AFM) electric field induced oxidation together with selective wet etching. The device structure being demonstrated is a percolating network consisting of conducting dots (70 nm in diameter) randomly distributed within an area of 1 × 1 μm2. Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between the temperature-dependent resistivity and Hall coefficient measurements of an aluminum control sample we made and those reported in the literature for bulk aluminum warrants reliability of our sample fabrication technique.

AB - We demonstrate the fabrication of mesoscopic devices on aluminum thin film by using atomic force microscopic (AFM) electric field induced oxidation together with selective wet etching. The device structure being demonstrated is a percolating network consisting of conducting dots (70 nm in diameter) randomly distributed within an area of 1 × 1 μm2. Details on how to fabricate the network structure and the making of electrical contacts to the device will be focused upon. Good agreement between the temperature-dependent resistivity and Hall coefficient measurements of an aluminum control sample we made and those reported in the literature for bulk aluminum warrants reliability of our sample fabrication technique.

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BT - Nano Science and Technology

PB - CRC Press

ER -

Fabrication of mesoscopic devices using atomic force microscopic electric field induced oxidation

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