Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique

B. S. Ooi; S. G. Ayling; A. C. Bryce; J. H. Marsh

doi:10.1109/68.414663

Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique

B. S. Ooi, S. G. Ayling, A. C. Bryce, J. H. Marsh

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.

Original language	English (US)
Pages (from-to)	944-946
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/68.414663
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physics and Astronomy (miscellaneous)

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abstract = "We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.",

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AU - Bryce, A. C.

AU - Marsh, J. H.

PY - 1995

Y1 - 1995

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AB - We have applied a new technique, based on impurity-free vacancy diffusion, to control the degree of intermixing across a wafer. Bandgap tuned lasers were fabricated using this technique. Five distinguishable lasing wavelengths were observed from five selected intermixed regions on a single chip. These lasers showed no significant change in transparency current, internal quantum efficiency or internal propagation loss, which indicates that the material quality was not degraded after intermixing.

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Fabrication of Multiple Wavelength Lasers in GaAs-AIGaAs Structures Using a One-Step Spatially Controlled Quantum-Well Intermixing Technique

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