Fabrication of phase masks with sub-half micron resolution by electron beam lithography

Enzo Di Fabrizio*, L. Grella, M. Gentili, M. Baciocchi, L. Mastrogiacomo, F. Vaninetti, F. Fontana

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This paper addresses the fabrication issues related to phase masks for photonics applications. A commercial e-beam lithography system operating at 50 kV is used to pattern a suitable resist on a fused silica substrate; the printed image is then transferred into the active material by means of Reactive Ion Etching in a fluorine-based chemistry. The optimised fabrication process, which will be described in detail, allows sub-500 nm resolution, centimetre long, phase masks with zero order suppression down to less than 3% and negligible field stitching. Some of the fabricated phase masks are used to create Bragg gratings into the core region of industry-grade optical fibres.

Original languageEnglish (US)
Pages (from-to)121-124
Number of pages4
JournalMicroelectronic Engineering
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Fabrication of phase masks with sub-half micron resolution by electron beam lithography'. Together they form a unique fingerprint.

Cite this