@article{90af286e2ef94394b4164d14b90652bd,
title = "Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics",
abstract = "We fabricated stretchable molybdenum disulfide thin-film transistors (MoS2 TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm2/(V·s) and an on/off current ratio of 104 with a notably low threshold voltage (∼1 V). Furthermore, our MoS2 TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS2 films for stretchable electronics.",
author = "Jiang Pu and Yijin Zhang and Yoshifumi Wada and {Tse-Wei Wang}, Jacob and Li, {Lain Jong} and Yoshihiro Iwasa and Taishi Takenobu",
note = "Funding Information: T.T. was partially supported by a Waseda University Grant (2011A-501) and the Funding Program for the Next Generation of World-Leading Researchers. Y.I. was supported by Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency, Grant-in-Aid for Scientific Research (S) (No. 21224009), for Specially Promoted Research (No. 25000003), and the “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)” from JSPS, Japan. L. J. Li acknowledges the support of the Academia Sinica and National Science Council in Taiwan (NSC-99-2112-M-001-021-MY3).",
year = "2013",
month = jul,
day = "8",
doi = "10.1063/1.4813311",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "2",
}