Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang Shiuan Liu; Chang Hsiao Chen; Wei Ting Hsu; Chih Pin Lin; Tzu Ping Lin; Li Jen Chi; Chao Yuan Chang; Shih Chieh Wu; Wen Hao Chang; Lain-Jong Li; Tuo Hung Hou

doi:10.1109/IEDM.2014.7046992

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂

Pang Shiuan Liu, Chang Hsiao Chen, Wei Ting Hsu, Chih Pin Lin, Tzu Ping Lin, Li Jen Chi, Chao Yuan Chang, Shih Chieh Wu, Wen Hao Chang, Lain-Jong Li, Tuo Hung Hou

Physical Sciences and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe₂. Because of its excellent compatibility with mass production, the application of WSe₂ UTB-PT for high-speed proximity interactive display has been proposed.

Original language	English (US)
Article number	7046992
Pages (from-to)	5.7.1-5.7.4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2015-February
Issue number	February
DOIs	https://doi.org/10.1109/IEDM.2014.7046992
State	Published - Feb 20 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2014.7046992

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Liu, P. S., Chen, C. H., Hsu, W. T., Lin, C. P., Lin, T. P., Chi, L. J., Chang, C. Y., Wu, S. C., Chang, W. H., Li, L.-J., & Hou, T. H. (2015). Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. Technical Digest - International Electron Devices Meeting, IEDM, 2015-February(February), 5.7.1-5.7.4. Article 7046992. https://doi.org/10.1109/IEDM.2014.7046992

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title = "Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2",

abstract = "P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.",

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AU - Lin, Chih Pin

AU - Lin, Tzu Ping

AU - Chi, Li Jen

AU - Chang, Chao Yuan

AU - Wu, Shih Chieh

AU - Chang, Wen Hao

AU - Li, Lain-Jong

AU - Hou, Tuo Hung

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AB - P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

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DO - 10.1109/IEDM.2014.7046992

M3 - Conference article

SN - 0163-1918

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SP - 5.7.1-5.7.4

JO - Technical Digest - International Electron Devices Meeting, IEDM

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T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂

Abstract

ASJC Scopus subject areas

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