Field-effect passivation on silicon nanowire solar cells

Anna Dalmau Mallorquí; Esther Alarcón-Lladó; Ignasi Canales Mundet; Amirreza Kiani; Bénédicte Demaurex; Stefaan De Wolf; Andreas Menzel; Margrit Zacharias; Anna Fontcuberta i Morral

doi:10.1007/s12274-014-0551-7

Field-effect passivation on silicon nanowire solar cells

Anna Dalmau Mallorquí, Esther Alarcón-Lladó, Ignasi Canales Mundet, Amirreza Kiani, Bénédicte Demaurex, Stefaan De Wolf, Andreas Menzel, Margrit Zacharias, Anna Fontcuberta i Morral^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO₂/SiN_x stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

Original language	English (US)
Pages (from-to)	673-681
Number of pages	9
Journal	Nano Research
Volume	8
Issue number	2
DOIs	https://doi.org/10.1007/s12274-014-0551-7
State	Published - Feb 2015
Externally published	Yes

Keywords

field-effect
nanowire
passivation
solar cell
surface recombination

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
General Materials Science

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10.1007/s12274-014-0551-7

Cite this

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title = "Field-effect passivation on silicon nanowire solar cells",

abstract = "Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.",

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doi = "10.1007/s12274-014-0551-7",

language = "English (US)",

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AU - Mallorquí, Anna Dalmau

AU - Alarcón-Lladó, Esther

AU - Mundet, Ignasi Canales

AU - Kiani, Amirreza

AU - Demaurex, Bénédicte

AU - De Wolf, Stefaan

AU - Menzel, Andreas

AU - Zacharias, Margrit

AU - Fontcuberta i Morral, Anna

PY - 2015/2

Y1 - 2015/2

N2 - Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

AB - Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.

KW - field-effect

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KW - surface recombination

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Field-effect passivation on silicon nanowire solar cells

Abstract

Keywords

ASJC Scopus subject areas

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