TY - JOUR
T1 - Field Emission of ITO-Coated Vertically Aligned Nanowire Array.
AU - Lee, Changhwa
AU - Lee, Seokwoo
AU - Lee, Seung S
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partly supported by Brain Korea 21 and Award No KUK-F1-038-02, made by King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2010/4/29
Y1 - 2010/4/29
N2 - An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.
AB - An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.
UR - http://hdl.handle.net/10754/596842
UR - http://www.nanoscalereslett.com/content/5/7/1128
UR - http://www.scopus.com/inward/record.url?scp=80052817205&partnerID=8YFLogxK
U2 - 10.1007/s11671-010-9613-2
DO - 10.1007/s11671-010-9613-2
M3 - Article
C2 - 20596363
SN - 1931-7573
VL - 5
SP - 1128
EP - 1131
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 7
ER -