@inproceedings{be72712c74de484eb938f15658f5d153,
title = "Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability",
abstract = "We report a field-free switching (FFS) scheme of Rashba-type crystal torque magnetic random-access memory (CT-MRAM) based on the AlInSb/InSb/CdTe heterostructures. Benefiting from the giant interfacial Rashba spin-orbit coupling (SOC), the spin-orbit torque efficiency of the spin-generation channel (ξ = 1.5) is four times larger than the conventional heavy-metal systems, enabling an ultra-low write current density of JSW = 7.5 × 105 A/cm2 at room temperature. Moreover, the crystal torque inherited from the low-symmetry point group (3m1) not only simplifies the device structure, but also warrants a stable FFS operation over a wide temperature range from −40 ℃ to 125 ℃.",
author = "Puyang Huang and Shan Yao and Aitian Chen and Zhenghang Zhi and Chenyi Fu and Zheng Zhu and Peng Chen and Hao Wu and Di Wu and Shouzhong Peng and Yumeng Yang and Xixiang Zhang and Xufeng Kou",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Electron Devices Meeting, IEDM 2024 ; Conference date: 07-12-2024 Through 11-12-2024",
year = "2024",
doi = "10.1109/IEDM50854.2024.10873571",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Electron Devices Meeting, IEDM 2024",
address = "United States",
}