Film morphology and thin film transistor performance of solution-processed oligothiophenes

Paul C. Chang; Josephine Lee; Daniel Huang; Vivek Subramanian; Amanda R. Murphy; Jean M.J. Fréchet

doi:10.1021/cm0496570

Film morphology and thin film transistor performance of solution-processed oligothiophenes

Paul C. Chang, Josephine Lee, Daniel Huang, Vivek Subramanian^*, Amanda R. Murphy, Jean M.J. Fréchet

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

The relationship between film morphology and thin film transistor (TFT) performance was investigated for two symmetrical α,ω-substituted sexithiophene derivatives containing thermally removable solubilizing groups. Solution deposition methods such as spin-coating, dip-casting, and inkjet-printing were optimized for solvent and annealing temperatures, and several substrate surface treatments were explored. The resulting thin films were characterized with AFM and the observed semiconductor performance was found to correlate with the morphology of the films, with the most crystalline films exhibiting the highest performance. Devices showed overall mobilities as high as 0.07 cm²/V s with on/off ratios > 10⁸, which are among the highest reported values for oligothiophenes solution cast at room temperature.

Original language	English (US)
Pages (from-to)	4783-4789
Number of pages	7
Journal	Chemistry of Materials
Volume	16
Issue number	23
DOIs	https://doi.org/10.1021/cm0496570
State	Published - Nov 16 2004
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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AU - Subramanian, Vivek

AU - Murphy, Amanda R.

AU - Fréchet, Jean M.J.

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AB - The relationship between film morphology and thin film transistor (TFT) performance was investigated for two symmetrical α,ω-substituted sexithiophene derivatives containing thermally removable solubilizing groups. Solution deposition methods such as spin-coating, dip-casting, and inkjet-printing were optimized for solvent and annealing temperatures, and several substrate surface treatments were explored. The resulting thin films were characterized with AFM and the observed semiconductor performance was found to correlate with the morphology of the films, with the most crystalline films exhibiting the highest performance. Devices showed overall mobilities as high as 0.07 cm2/V s with on/off ratios > 108, which are among the highest reported values for oligothiophenes solution cast at room temperature.

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Film morphology and thin film transistor performance of solution-processed oligothiophenes

Abstract

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