Finite Boxes—A Generalization of the Finite-Difference Method Suitable for Semiconductor Device Simulation

Andrea F. Franz; Gerhard A. Franz; Siegfried Selberherr; Christian Ringhofer; Peter Markowich

doi:10.1109/T-ED.1983.21261

Finite Boxes—A Generalization of the Finite-Difference Method Suitable for Semiconductor Device Simulation

Andrea F. Franz, Gerhard A. Franz, Siegfried Selberherr, Christian Ringhofer, Peter Markowich

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

A two-dimensional numerical device-simulation system is presented. A novel discretization scheme, called “finite boxes,” allows an optimal grid-point allocation and can be applied to nonrectangular devices.

Original language	English (US)
Pages (from-to)	1070-1082
Number of pages	13
Journal	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume	30
Issue number	9
DOIs	https://doi.org/10.1109/T-ED.1983.21261
State	Published - Sep 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1983.21261

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title = "Finite Boxes—A Generalization of the Finite-Difference Method Suitable for Semiconductor Device Simulation",

abstract = "A two-dimensional numerical device-simulation system is presented. A novel discretization scheme, called “finite boxes,” allows an optimal grid-point allocation and can be applied to nonrectangular devices.",

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AU - Franz, Andrea F.

AU - Franz, Gerhard A.

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AU - Ringhofer, Christian

AU - Markowich, Peter

PY - 1983/9

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N2 - A two-dimensional numerical device-simulation system is presented. A novel discretization scheme, called “finite boxes,” allows an optimal grid-point allocation and can be applied to nonrectangular devices.

AB - A two-dimensional numerical device-simulation system is presented. A novel discretization scheme, called “finite boxes,” allows an optimal grid-point allocation and can be applied to nonrectangular devices.

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M3 - Article

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Finite Boxes—A Generalization of the Finite-Difference Method Suitable for Semiconductor Device Simulation

Abstract

ASJC Scopus subject areas

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