TY - GEN
T1 - First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode
AU - Majid, Mohammed Abdul
AU - Al-Jabr, Ahmad
AU - Oubei, Hassan M.
AU - Alias, Mohd Sharizal
AU - Ng, Tien Khee
AU - Anjum, Dalaver H.
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/11/12
Y1 - 2015/11/12
N2 - We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
AB - We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
UR - http://hdl.handle.net/10754/622548
UR - http://ieeexplore.ieee.org/document/7323633/
UR - http://www.scopus.com/inward/record.url?scp=84964836167&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2015.7323633
DO - 10.1109/IPCon.2015.7323633
M3 - Conference contribution
SN - 9781479974658
SP - 575
EP - 576
BT - 2015 IEEE Photonics Conference (IPC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -