First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed Abdul Majid; Ahmad Al-Jabr; Rami T. Elafandy; Hassan M. Oubei; Mohd Sharizal Alias; Bayan A. Alnahhas; Dalaver H. Anjum; Tien Khee Ng; Mohamed Shehata; Boon S. Ooi

doi:10.1117/12.2202768

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed Abdul Majid, Ahmad Al-Jabr, Rami T. Elafandy, Hassan M. Oubei, Mohd Sharizal Alias, Bayan A. Alnahhas, Dalaver H. Anjum, Tien Khee Ng, Mohamed Shehata, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Original language	English (US)
Title of host publication	Novel In-Plane Semiconductor Lasers XV
Publisher	SPIE-Intl Soc Optical Eng
ISBN (Print)	9781510600027
DOIs	https://doi.org/10.1117/12.2202768
State	Published - Mar 7 2016

Access to Document

10.1117/12.2202768

https://repository.kaust.edu.sa/bitstream/10754/619774/1/97670A.pdf

Cite this

Majid, M. A., Al-Jabr, A., Elafandy, R. T., Oubei, H. M., Alias, M. S., Alnahhas, B. A., Anjum, D. H., Ng, T. K., Shehata, M., & Ooi, B. S. (2016). First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. In Novel In-Plane Semiconductor Lasers XV SPIE-Intl Soc Optical Eng. https://doi.org/10.1117/12.2202768

@inproceedings{6be8d98d497b44c3b00c8360a0e1b104,

title = "First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique",

abstract = "In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. {\textcopyright} (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",

author = "Majid, {Mohammed Abdul} and Ahmad Al-Jabr and Elafandy, {Rami T.} and Oubei, {Hassan M.} and Alias, {Mohd Sharizal} and Alnahhas, {Bayan A.} and Anjum, {Dalaver H.} and Ng, {Tien Khee} and Mohamed Shehata and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST.",

year = "2016",

month = mar,

day = "7",

doi = "10.1117/12.2202768",

language = "English (US)",

isbn = "9781510600027",

booktitle = "Novel In-Plane Semiconductor Lasers XV",

publisher = "SPIE-Intl Soc Optical Eng",

}

Majid, MA, Al-Jabr, A, Elafandy, RT, Oubei, HM, Alias, MS, Alnahhas, BA, Anjum, DH, Ng, TK, Shehata, M & Ooi, BS 2016, First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. in Novel In-Plane Semiconductor Lasers XV. SPIE-Intl Soc Optical Eng. https://doi.org/10.1117/12.2202768

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. / Majid, Mohammed Abdul; Al-Jabr, Ahmad; Elafandy, Rami T. et al.
Novel In-Plane Semiconductor Lasers XV. SPIE-Intl Soc Optical Eng, 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

AU - Majid, Mohammed Abdul

AU - Al-Jabr, Ahmad

AU - Elafandy, Rami T.

AU - Oubei, Hassan M.

AU - Alias, Mohd Sharizal

AU - Alnahhas, Bayan A.

AU - Anjum, Dalaver H.

AU - Ng, Tien Khee

AU - Shehata, Mohamed

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST.

PY - 2016/3/7

Y1 - 2016/3/7

N2 - In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

AB - In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

UR - http://hdl.handle.net/10754/619774

UR - http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2202768

UR - http://www.scopus.com/inward/record.url?scp=84978498935&partnerID=8YFLogxK

U2 - 10.1117/12.2202768

DO - 10.1117/12.2202768

M3 - Conference contribution

SN - 9781510600027

BT - Novel In-Plane Semiconductor Lasers XV

PB - SPIE-Intl Soc Optical Eng

ER -

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Abstract

Access to Document

Other files and links

Fingerprint

Cite this