Flexible and stretchable thin-film transistors based on molybdenum disulphide

The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS₂) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS₂ in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS₂-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS₂ provide significant advantages for future flexible and stretchable electronics. This journal is