Flexible nanoscale high-performance FinFETs

Galo T. Sevilla; Mohamed T. Ghoneim; Hossain M. Fahad; Jhonathan Prieto Rojas; Aftab M. Hussain; Muhammad Mustafa Hussain

doi:10.1021/nn5041608

Flexible nanoscale high-performance FinFETs

Galo T. Sevilla, Mohamed T. Ghoneim, Hossain M. Fahad, Jhonathan Prieto Rojas, Aftab M. Hussain, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

Original language	English (US)
Pages (from-to)	9850-9856
Number of pages	7
Journal	ACS Nano
Volume	8
Issue number	10
DOIs	https://doi.org/10.1021/nn5041608
State	Published - Sep 5 2014

ASJC Scopus subject areas

General Physics and Astronomy
General Materials Science
General Engineering

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10.1021/nn5041608

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title = "Flexible nanoscale high-performance FinFETs",

abstract = "With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.",

author = "Sevilla, {Galo T.} and Ghoneim, {Mohamed T.} and Fahad, {Hossain M.} and Rojas, {Jhonathan Prieto} and Hussain, {Aftab M.} and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.",

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T1 - Flexible nanoscale high-performance FinFETs

AU - Sevilla, Galo T.

AU - Ghoneim, Mohamed T.

AU - Fahad, Hossain M.

AU - Rojas, Jhonathan Prieto

AU - Hussain, Aftab M.

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.

PY - 2014/9/5

Y1 - 2014/9/5

N2 - With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

AB - With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

UR - http://hdl.handle.net/10754/563807

UR - https://pubs.acs.org/doi/10.1021/nn5041608

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JO - ACS Nano

JF - ACS Nano

IS - 10

ER -

Flexible nanoscale high-performance FinFETs

Abstract

ASJC Scopus subject areas

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