Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

Raira Gotoh; Kozo Fujiwara; Xinbo Yang; Haruhiko Koizumi; Jun Nozawa; Satoshi Uda

doi:10.1063/1.3675860

Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

Raira Gotoh, Kozo Fujiwara^*, Xinbo Yang, Haruhiko Koizumi, Jun Nozawa, Satoshi Uda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.

Original language	English (US)
Article number	021903
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3675860
State	Published - Jan 9 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.",

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T1 - Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

AU - Gotoh, Raira

AU - Fujiwara, Kozo

AU - Yang, Xinbo

AU - Koizumi, Haruhiko

AU - Nozawa, Jun

AU - Uda, Satoshi

PY - 2012/1/9

Y1 - 2012/1/9

N2 - The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.

AB - The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.

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U2 - 10.1063/1.3675860

DO - 10.1063/1.3675860

M3 - Article

AN - SCOPUS:84862909255

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021903

ER -

Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

Abstract

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