TY - JOUR
T1 - Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors
AU - Hassan, Ali H.
AU - Hota, Mrinal Kanti
AU - Alshammari, Fwzah Hamud
AU - Alshareef, Husam N.
AU - Salama, Khaled N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST. A.H.H. and M.K.H. contributed equally to this work.
PY - 2020/2/3
Y1 - 2020/2/3
N2 - Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.
AB - Using one binary oxide, a fully transparent thin-film transistor (TFT)-based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.
UR - http://hdl.handle.net/10754/661494
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201901083
UR - http://www.scopus.com/inward/record.url?scp=85078818208&partnerID=8YFLogxK
U2 - 10.1002/aelm.201901083
DO - 10.1002/aelm.201901083
M3 - Article
SN - 2199-160X
SP - 1901083
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
ER -