Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer

Nasir Alfaraj; Abdullah Alhamoud; Davide Priante; Bilal Janjua; Abdullah Alatawi; Abdulrahman M. Albadri; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.2506210

Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer

Nasir Alfaraj, Abdullah Alhamoud, Davide Priante, Bilal Janjua, Abdullah Alatawi, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices XIV
Publisher	SPIE-Intl Soc Optical Eng
ISBN (Print)	9781510624788
DOIs	https://doi.org/10.1117/12.2506210
State	Published - Mar 1 2019

Access to Document

10.1117/12.2506210

https://repository.kaust.edu.sa/bitstream/10754/631282/1/Alhamoud_109181X.pdf

Cite this

Alfaraj, N., Alhamoud, A., Priante, D., Janjua, B., Alatawi, A., Albadri, A. M., Alyamani, A. Y., Ng, T. K., & Ooi, B. S. (2019). Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. In Gallium Nitride Materials and Devices XIV SPIE-Intl Soc Optical Eng. https://doi.org/10.1117/12.2506210

@inproceedings{544c78fdb6814947bbcf875e02b9ea7b,

title = "Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer",

abstract = "Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.",

author = "Nasir Alfaraj and Abdullah Alhamoud and Davide Priante and Bilal Janjua and Abdullah Alatawi and Albadri, {Abdulrahman M.} and Alyamani, {Ahmed Y.} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge the financial support of King Abdulaziz City for Science and Technology (KACST), grant no. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77 and KCR/1/4055-01-01.",

year = "2019",

month = mar,

day = "1",

doi = "10.1117/12.2506210",

language = "English (US)",

isbn = "9781510624788",

booktitle = "Gallium Nitride Materials and Devices XIV",

publisher = "SPIE-Intl Soc Optical Eng",

}

Alfaraj, N, Alhamoud, A, Priante, D, Janjua, B, Alatawi, A, Albadri, AM, Alyamani, AY, Ng, TK & Ooi, BS 2019, Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. in Gallium Nitride Materials and Devices XIV. SPIE-Intl Soc Optical Eng. https://doi.org/10.1117/12.2506210

Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. / Alfaraj, Nasir; Alhamoud, Abdullah; Priante, Davide et al.
Gallium Nitride Materials and Devices XIV. SPIE-Intl Soc Optical Eng, 2019.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer

AU - Alfaraj, Nasir

AU - Alhamoud, Abdullah

AU - Priante, Davide

AU - Janjua, Bilal

AU - Alatawi, Abdullah

AU - Albadri, Abdulrahman M.

AU - Alyamani, Ahmed Y.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge the financial support of King Abdulaziz City for Science and Technology (KACST), grant no. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77 and KCR/1/4055-01-01.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.

AB - Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.

UR - http://hdl.handle.net/10754/631282

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918/2506210/Functional-integrity-and-stable-high-temperature-operation-of-planarized-ultraviolet/10.1117/12.2506210.full

UR - http://www.scopus.com/inward/record.url?scp=85065800861&partnerID=8YFLogxK

U2 - 10.1117/12.2506210

DO - 10.1117/12.2506210

M3 - Conference contribution

SN - 9781510624788

BT - Gallium Nitride Materials and Devices XIV

PB - SPIE-Intl Soc Optical Eng

ER -

Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this