Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

Keyphrases

• Force Loading 100%
• Impulsive Force 66%
• Rollable Display 66%
• Effective Electron Mobility 33%
• Bistable Materials 33%
• Gadgets 33%
• Leakage Current Density 33%
• Gate Dielectric Layer 33%
• Display Circuit 33%
• Bracelet 33%
• Low Variation 33%
• Impact Force 33%

Engineering

• Field-Effect Transistor 100%
• Bistables 100%
• Dielectric Layer 33%
• Gate Dielectric 33%
• Stable State 33%
• Channel Device 33%
• Integrated Circuit 33%
• Impact Force 33%
• Flexible Electronics 33%

Material Science

• Field Effect Transistors 100%
• Electronic Circuit 50%
• Dielectric Material 50%
• Carrier Transport 50%
• Transistor 50%
• Density 50%
• Electron Mobility 50%