Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes

Ujjal K. Gautam; Yoshio Bando; Jinhua Zhan; Pedro M.F.J. Costa; Xiaosheng Fang; Dmitri Golberg

doi:10.1002/adma.200701761

Ga-doped ZnS nanowires as precursors for ZnO/ZnGa₂O₄ nanotubes

Ujjal K. Gautam, Yoshio Bando, Jinhua Zhan, Pedro M.F.J. Costa, Xiaosheng Fang, Dmitri Golberg

Research output: Contribution to journal › Article › peer-review

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Abstract

A study was conducted to demonstrate the synthesis of ZnS nanowires homogeneously doped with gallium (Ga) and sheathed with a few layers of carbon. The study demonstrated that these nanowires are also used as precursors, to prepare nanotubes composed of ZnO and ZnGa₂O₄ hetero-nanostructures. It was also demonstrated that ZnGa₂O ₄ is an essential transparent conducting oxide with a bandgap of ca 4.5 eV. The material was found to be extensively used in field-emission displays, as a coating layer in multi-color emitters. It was found that ZnGa₂O₄ exhibits strong acid corrosion resistance properties in comparison to other phosphor oxides. The study also demonstrated that these heterostructured ZnGa₂O₄ nanotubes can be potentially used as phosphors under environmentally corrosive conditions.

Original language	English (US)
Pages (from-to)	810-814
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	4
DOIs	https://doi.org/10.1002/adma.200701761
State	Published - Feb 18 2008
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes",

abstract = "A study was conducted to demonstrate the synthesis of ZnS nanowires homogeneously doped with gallium (Ga) and sheathed with a few layers of carbon. The study demonstrated that these nanowires are also used as precursors, to prepare nanotubes composed of ZnO and ZnGa2O4 hetero-nanostructures. It was also demonstrated that ZnGa2O 4 is an essential transparent conducting oxide with a bandgap of ca 4.5 eV. The material was found to be extensively used in field-emission displays, as a coating layer in multi-color emitters. It was found that ZnGa2O4 exhibits strong acid corrosion resistance properties in comparison to other phosphor oxides. The study also demonstrated that these heterostructured ZnGa2O4 nanotubes can be potentially used as phosphors under environmentally corrosive conditions.",

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T1 - Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes

AU - Gautam, Ujjal K.

AU - Bando, Yoshio

AU - Zhan, Jinhua

AU - Costa, Pedro M.F.J.

AU - Fang, Xiaosheng

AU - Golberg, Dmitri

PY - 2008/2/18

Y1 - 2008/2/18

N2 - A study was conducted to demonstrate the synthesis of ZnS nanowires homogeneously doped with gallium (Ga) and sheathed with a few layers of carbon. The study demonstrated that these nanowires are also used as precursors, to prepare nanotubes composed of ZnO and ZnGa2O4 hetero-nanostructures. It was also demonstrated that ZnGa2O 4 is an essential transparent conducting oxide with a bandgap of ca 4.5 eV. The material was found to be extensively used in field-emission displays, as a coating layer in multi-color emitters. It was found that ZnGa2O4 exhibits strong acid corrosion resistance properties in comparison to other phosphor oxides. The study also demonstrated that these heterostructured ZnGa2O4 nanotubes can be potentially used as phosphors under environmentally corrosive conditions.

AB - A study was conducted to demonstrate the synthesis of ZnS nanowires homogeneously doped with gallium (Ga) and sheathed with a few layers of carbon. The study demonstrated that these nanowires are also used as precursors, to prepare nanotubes composed of ZnO and ZnGa2O4 hetero-nanostructures. It was also demonstrated that ZnGa2O 4 is an essential transparent conducting oxide with a bandgap of ca 4.5 eV. The material was found to be extensively used in field-emission displays, as a coating layer in multi-color emitters. It was found that ZnGa2O4 exhibits strong acid corrosion resistance properties in comparison to other phosphor oxides. The study also demonstrated that these heterostructured ZnGa2O4 nanotubes can be potentially used as phosphors under environmentally corrosive conditions.

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Ga-doped ZnS nanowires as precursors for ZnO/ZnGa₂O₄ nanotubes

Abstract

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