Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes

Ujjal K. Gautam, Yoshio Bando, Jinhua Zhan, Pedro M.F.J. Costa, Xiaosheng Fang, Dmitri Golberg

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


A study was conducted to demonstrate the synthesis of ZnS nanowires homogeneously doped with gallium (Ga) and sheathed with a few layers of carbon. The study demonstrated that these nanowires are also used as precursors, to prepare nanotubes composed of ZnO and ZnGa2O4 hetero-nanostructures. It was also demonstrated that ZnGa2O 4 is an essential transparent conducting oxide with a bandgap of ca 4.5 eV. The material was found to be extensively used in field-emission displays, as a coating layer in multi-color emitters. It was found that ZnGa2O4 exhibits strong acid corrosion resistance properties in comparison to other phosphor oxides. The study also demonstrated that these heterostructured ZnGa2O4 nanotubes can be potentially used as phosphors under environmentally corrosive conditions.

Original languageEnglish (US)
Pages (from-to)810-814
Number of pages5
JournalAdvanced Materials
Issue number4
StatePublished - Feb 18 2008
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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