Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

S. Z. Wang; S. F. Yoon; T. K. Ng; W. K. Loke; Z. Z. Sun; K. C. Yew; W. J. Fan

Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

S. Z. Wang^*, S. F. Yoon, T. K. Ng, W. K. Loke, Z. Z. Sun, K. C. Yew, W. J. Fan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6μm. Also reported is a PL result amongst the best, as compared with the literature.

Original language	English (US)
Pages (from-to)	651-654
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2002
Externally published	Yes
Event	14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: May 12 2002 → May 16 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{080cd22061a44bab836b026bda944467,

title = "Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM",

abstract = "Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6μm. Also reported is a PL result amongst the best, as compared with the literature.",

author = "Wang, {S. Z.} and Yoon, {S. F.} and Ng, {T. K.} and Loke, {W. K.} and Sun, {Z. Z.} and Yew, {K. C.} and Fan, {W. J.}",

year = "2002",

language = "English (US)",

pages = "651--654",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Indium Phosphide and Related Materials Conference ; Conference date: 12-05-2002 Through 16-05-2002",

}

TY - JOUR

T1 - Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

AU - Wang, S. Z.

AU - Yoon, S. F.

AU - Ng, T. K.

AU - Loke, W. K.

AU - Sun, Z. Z.

AU - Yew, K. C.

AU - Fan, W. J.

PY - 2002

Y1 - 2002

N2 - Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6μm. Also reported is a PL result amongst the best, as compared with the literature.

AB - Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6μm. Also reported is a PL result amongst the best, as compared with the literature.

UR - http://www.scopus.com/inward/record.url?scp=0036053107&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036053107

SN - 1092-8669

SP - 651

EP - 654

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 14th Indium Phosphide and Related Materials Conference

Y2 - 12 May 2002 through 16 May 2002

ER -

Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM

Abstract

ASJC Scopus subject areas

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