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Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3μM and 1.55μM
S. Z. Wang*, S. F. Yoon, T. K. Ng, W. K. Loke, Z. Z. Sun, K. C. Yew, W. J. Fan
*Corresponding author for this work
Research output: Contribution to journal › Conference article › peer-review