TY - GEN
T1 - Gallium nitride on gallium oxide substrate for integrated nonlinear optics
AU - Awan, Kashif M.
AU - Dolgaleva, Ksenia
AU - Muhammed, Mufasila M.
AU - Roqan, Iman S.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/30
Y1 - 2017/10/30
N2 - Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity - the characteristic of all 111-V semiconductors - GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (-201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
AB - Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity - the characteristic of all 111-V semiconductors - GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (-201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
KW - GaN epitaxial growth component
KW - all-optical wavelength conversion
KW - four-wave mixing
KW - integrated photonic circuits
KW - nonlinear optics
KW - plasma etching
KW - semiconductor fabrication
UR - http://www.scopus.com/inward/record.url?scp=85040535019&partnerID=8YFLogxK
U2 - 10.1109/PN.2017.8090587
DO - 10.1109/PN.2017.8090587
M3 - Conference contribution
AN - SCOPUS:85040535019
T3 - 2017 Photonics North, PN 2017
BT - 2017 Photonics North, PN 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 Photonics North, PN 2017
Y2 - 6 June 2017 through 8 June 2017
ER -