Gallium nitride on gallium oxide substrate for integrated nonlinear optics

Kashif M. Awan, Ksenia Dolgaleva, Mufasila M. Muhammed, Iman S. Roqan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity - the characteristic of all 111-V semiconductors - GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (-201) β-Gallium Oxide (Ga2O3) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al2O3) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).

Original languageEnglish (US)
Title of host publication2017 Photonics North, PN 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538621929
StatePublished - Oct 30 2017
Event2017 Photonics North, PN 2017 - Ottawa, Canada
Duration: Jun 6 2017Jun 8 2017

Publication series

Name2017 Photonics North, PN 2017


Conference2017 Photonics North, PN 2017


  • GaN epitaxial growth component
  • all-optical wavelength conversion
  • four-wave mixing
  • integrated photonic circuits
  • nonlinear optics
  • plasma etching
  • semiconductor fabrication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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