TY - JOUR
T1 - GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
AU - Hsiao, Yu Hsuan
AU - Tsai, Meng-Lin
AU - He, Jr-Hau
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Science Council of Taiwan under Grant 102-2628-M-002-006-MY3 and Grant 101-2221-E-002-115-MY2 and in part by National Taiwan University under Grant 10R70823.
PY - 2015/3
Y1 - 2015/3
N2 - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
AB - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.
UR - http://hdl.handle.net/10754/594178
UR - https://ieeexplore.ieee.org/document/6914566/
UR - http://www.scopus.com/inward/record.url?scp=84926387907&partnerID=8YFLogxK
U2 - 10.1109/tia.2014.2360984
DO - 10.1109/tia.2014.2360984
M3 - Article
SN - 0093-9994
VL - 51
SP - 1277
EP - 1283
JO - IEEE Transactions on Industry Applications
JF - IEEE Transactions on Industry Applications
IS - 2
ER -