GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management

Yu Hsuan Hsiao; Meng Lin Tsai; Jr Hau He

doi:10.1109/IAS.2013.6682537

GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management

Yu Hsuan Hsiao, Meng Lin Tsai, Jr Hau He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.

Original language	English (US)
Title of host publication	2013 IEEE Industry Applications Society Annual Meeting, IAS 2013
DOIs	https://doi.org/10.1109/IAS.2013.6682537
State	Published - 2013
Externally published	Yes
Event	2013 IEEE Industry Applications Society Annual Meeting, IAS 2013 - Lake Buena Vista, FL, United States Duration: Oct 6 2013 → Oct 11 2013

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
ISSN (Print)	0197-2618

Other

Other	2013 IEEE Industry Applications Society Annual Meeting, IAS 2013
Country/Territory	United States
City	Lake Buena Vista, FL
Period	10/6/13 → 10/11/13

Keywords

GaN
Light emitting diode
multiple quantum well
nanostructure

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IAS.2013.6682537

Cite this

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title = "GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management",

abstract = "Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.",

keywords = "GaN, Light emitting diode, multiple quantum well, nanostructure",

author = "Hsiao, {Yu Hsuan} and Tsai, {Meng Lin} and He, {Jr Hau}",

year = "2013",

doi = "10.1109/IAS.2013.6682537",

language = "English (US)",

isbn = "9781467352024",

series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

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note = "2013 IEEE Industry Applications Society Annual Meeting, IAS 2013 ; Conference date: 06-10-2013 Through 11-10-2013",

}

Hsiao, YH, Tsai, ML & He, JH 2013, GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management. in 2013 IEEE Industry Applications Society Annual Meeting, IAS 2013., 6682537, Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 2013 IEEE Industry Applications Society Annual Meeting, IAS 2013, Lake Buena Vista, FL, United States, 10/6/13. https://doi.org/10.1109/IAS.2013.6682537

GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management. / Hsiao, Yu Hsuan; Tsai, Meng Lin; He, Jr Hau.
2013 IEEE Industry Applications Society Annual Meeting, IAS 2013. 2013. 6682537 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tsai, Meng Lin

AU - He, Jr Hau

PY - 2013

Y1 - 2013

N2 - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.

AB - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.

KW - GaN

KW - Light emitting diode

KW - multiple quantum well

KW - nanostructure

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DO - 10.1109/IAS.2013.6682537

M3 - Conference contribution

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GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management

Abstract

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Keywords

ASJC Scopus subject areas

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