GaN nano-membrane for optoelectronic and electronic device applications

Boon S. Ooi; Rami T. Elafandy; Ahmed Ben Slimane; M. Abdul Majid; Tien Khee Ng

doi:10.1364/acpc.2014.ath4i.4

GaN nano-membrane for optoelectronic and electronic device applications

Boon S. Ooi, Rami T. Elafandy, Ahmed Ben Slimane, M. Abdul Majid, Tien Khee Ng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

Original language	English (US)
Title of host publication	Asia Communications and Photonics Conference 2014
Publisher	The Optical Society
ISBN (Print)	9781557528520
DOIs	https://doi.org/10.1364/acpc.2014.ath4i.4
State	Published - 2014

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@inproceedings{13c5b31ead3d46bc9dc0c3fcd155272a,

title = "GaN nano-membrane for optoelectronic and electronic device applications",

abstract = "The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.",

author = "Ooi, {Boon S.} and Elafandy, {Rami T.} and {Ben Slimane}, Ahmed and {Abdul Majid}, M. and Ng, {Tien Khee}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2014",

doi = "10.1364/acpc.2014.ath4i.4",

language = "English (US)",

isbn = "9781557528520",

booktitle = "Asia Communications and Photonics Conference 2014",

publisher = "The Optical Society",

address = "United States",

}

TY - GEN

T1 - GaN nano-membrane for optoelectronic and electronic device applications

AU - Ooi, Boon S.

AU - Elafandy, Rami T.

AU - Ben Slimane, Ahmed

AU - Abdul Majid, M.

AU - Ng, Tien Khee

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014

Y1 - 2014

N2 - The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

AB - The ~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

UR - http://hdl.handle.net/10754/575769

UR - https://www.osapublishing.org/abstract.cfm?URI=ACPC-2014-ATh4I.4

U2 - 10.1364/acpc.2014.ath4i.4

DO - 10.1364/acpc.2014.ath4i.4

M3 - Conference contribution

SN - 9781557528520

BT - Asia Communications and Photonics Conference 2014

PB - The Optical Society

ER -

GaN nano-membrane for optoelectronic and electronic device applications

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