Abstract
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
Original language | English (US) |
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Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2012 |
State | Published - 2012 |
Event | Quantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012 |
Other
Other | Quantum Electronics and Laser Science Conference, QELS 2012 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 05/6/12 → 05/11/12 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics