Abstract
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
| Original language | English (US) |
|---|---|
| Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2012 |
| State | Published - 2012 |
| Event | Quantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012 |
Other
| Other | Quantum Electronics and Laser Science Conference, QELS 2012 |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 05/6/12 → 05/11/12 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics