GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

I. A. Ajia; Y. Yamashita; K. Lorenz; M. M. Muhammed; L. Spasevski; D. Almalawi; J. Xu; K. Iizuka; Y. Morishima; D. H. Anjum; N. Wei; R. W. Martin; A. Kuramata; I. S. Roqan

doi:10.1063/1.5025178

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices

I. A. Ajia, Y. Yamashita, K. Lorenz, M. M. Muhammed, L. Spasevski, D. Almalawi, J. Xu, K. Iizuka, Y. Morishima, D. H. Anjum, N. Wei, R. W. Martin, A. Kuramata, I. S. Roqan^*

^*Corresponding author for this work

Material Science and Engineering

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Abstract

GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga₂O₃ substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga₂O₃ substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga₂O₃ substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga₂O₃ substrate can be a potential candidate for UV vertical emitting devices.

Original language	English (US)
Article number	082102
Journal	Applied Physics Letters
Volume	113
Issue number	8
DOIs	https://doi.org/10.1063/1.5025178
State	Published - Aug 20 2018

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ajia, I. A., Yamashita, Y., Lorenz, K., Muhammed, M. M., Spasevski, L., Almalawi, D., Xu, J., Iizuka, K., Morishima, Y., Anjum, D. H., Wei, N., Martin, R. W., Kuramata, A., & Roqan, I. S. (2018). GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices. Applied Physics Letters, 113(8), Article 082102. https://doi.org/10.1063/1.5025178

@article{22b5a9501c984b4692f1f2f8dd39d1d7,

title = "GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices",

abstract = "GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.",

author = "Ajia, {I. A.} and Y. Yamashita and K. Lorenz and Muhammed, {M. M.} and L. Spasevski and D. Almalawi and J. Xu and K. Iizuka and Y. Morishima and Anjum, {D. H.} and N. Wei and Martin, {R. W.} and A. Kuramata and Roqan, {I. S.}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

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day = "20",

doi = "10.1063/1.5025178",

language = "English (US)",

volume = "113",

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Ajia, IA, Yamashita, Y, Lorenz, K, Muhammed, MM, Spasevski, L, Almalawi, D, Xu, J, Iizuka, K, Morishima, Y, Anjum, DH, Wei, N, Martin, RW, Kuramata, A & Roqan, IS 2018, 'GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices', Applied Physics Letters, vol. 113, no. 8, 082102. https://doi.org/10.1063/1.5025178

TY - JOUR

T1 - GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

AU - Ajia, I. A.

AU - Yamashita, Y.

AU - Lorenz, K.

AU - Muhammed, M. M.

AU - Spasevski, L.

AU - Almalawi, D.

AU - Xu, J.

AU - Iizuka, K.

AU - Morishima, Y.

AU - Anjum, D. H.

AU - Wei, N.

AU - Martin, R. W.

AU - Kuramata, A.

AU - Roqan, I. S.

PY - 2018/8/20

Y1 - 2018/8/20

N2 - GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.

AB - GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 ¯ 01-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the 2 ¯ 01-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.

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U2 - 10.1063/1.5025178

DO - 10.1063/1.5025178

M3 - Article

AN - SCOPUS:85052385305

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082102

ER -

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate for UV vertical light emitting devices

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