GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

W. K. Loke; S. F. Yoon; Z. Xu; K. H. Tan; T. K. Ng; Y. K. Sim; S. Wicaksono; N. Saadsaoud; D. Decoster; J. Chazelas

doi:10.1063/1.2976124

GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

W. K. Loke, S. F. Yoon, Z. Xu, K. H. Tan, T. K. Ng, Y. K. Sim, S. Wicaksono, N. Saadsaoud, D. Decoster, J. Chazelas

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Abstract

We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.

Original language	English (US)
Article number	081102
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2976124
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2976124

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@article{cc18c7817f74484fa05df03a1926e124,

title = "GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy",

abstract = "We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.",

author = "Loke, {W. K.} and Yoon, {S. F.} and Z. Xu and Tan, {K. H.} and Ng, {T. K.} and Sim, {Y. K.} and S. Wicaksono and N. Saadsaoud and D. Decoster and J. Chazelas",

note = "Funding Information: The authors acknowledge the partial financial support by the MERLION under Project No. 09.01.06 sponsored by the France Embassy in Singapore. This work was also partially supported by the European Commission Network of Excellence Program ISIS under Grant No. 26592 and the THALES@NTU laboratory. Assistance provided by C. Y. Ngo is also acknowledged.",

year = "2008",

doi = "10.1063/1.2976124",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "8",

}

TY - JOUR

T1 - GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

AU - Loke, W. K.

AU - Yoon, S. F.

AU - Xu, Z.

AU - Tan, K. H.

AU - Ng, T. K.

AU - Sim, Y. K.

AU - Wicaksono, S.

AU - Saadsaoud, N.

AU - Decoster, D.

AU - Chazelas, J.

N1 - Funding Information: The authors acknowledge the partial financial support by the MERLION under Project No. 09.01.06 sponsored by the France Embassy in Singapore. This work was also partially supported by the European Commission Network of Excellence Program ISIS under Grant No. 26592 and the THALES@NTU laboratory. Assistance provided by C. Y. Ngo is also acknowledged.

PY - 2008

Y1 - 2008

N2 - We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.

AB - We present a GaNAsSb/GaAs p-i-n waveguide photodetector operating in the 1.0-1.6 μm wavelength range with enhanced photoresponsivity compared to a top-illuminated photodetector fabricated using the same material system. The device consists of a strained GaNAsSb layer, with N and Sb contents of 3.5% and 18%, respectively, sandwiched between GaAs:Si (n -type) and GaAs:C (p -type) layers. X-ray reciprocal space map of the GaNAsSb layer before device fabrication showed that the film relaxation is ∼1%. At 1.55 μm, photoresponsivities of 0.25 and 0.29 A/W for devices with 6.5 and 10 μm ridge width, respectively, was demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=51349152680&partnerID=8YFLogxK

U2 - 10.1063/1.2976124

DO - 10.1063/1.2976124

M3 - Article

AN - SCOPUS:51349152680

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081102

ER -

GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy

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