Gas-Phase Modification of Polymer Coatings: The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions

S. Ming Lee; Stephen Matuszczak; Jean M.J. Fréchet; Chester Lee; Yosef Shacham-Diamand

doi:10.1021/cm00046a037

Gas-Phase Modification of Polymer Coatings: The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions

S. Ming Lee, Stephen Matuszczak, Jean M.J. Fréchet^*, Chester Lee, Yosef Shacham-Diamand

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Image-tone reversal has been demonstrated with two chemically amplified resists through gas-phase silylation and dry development with oxygen plasma etching. Selective silylation of the radiation-exposed or unexposed portions of the resists has been achieved by two different approaches: (a) controlling the availability of the reactive groups; (b) varying the permeability of the resist material to the silylating reagent. Those areas of the resist films that are silylated resist oxygen plasma etching. This provides access to high-resolution images with the high sensitivity of the chemically amplified resists. Techniques useful to monitor the silylation process and factors affecting the silylation and etching processes are discussed.

Original language	English (US)
Pages (from-to)	1796-1802
Number of pages	7
Journal	Chemistry of Materials
Volume	6
Issue number	10
DOIs	https://doi.org/10.1021/cm00046a037
State	Published - Oct 1 1994
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/cm00046a037

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@article{3d7ae833600b4e5fa16879a2788fcf51,

title = "Gas-Phase Modification of Polymer Coatings: The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions",

abstract = "Image-tone reversal has been demonstrated with two chemically amplified resists through gas-phase silylation and dry development with oxygen plasma etching. Selective silylation of the radiation-exposed or unexposed portions of the resists has been achieved by two different approaches: (a) controlling the availability of the reactive groups; (b) varying the permeability of the resist material to the silylating reagent. Those areas of the resist films that are silylated resist oxygen plasma etching. This provides access to high-resolution images with the high sensitivity of the chemically amplified resists. Techniques useful to monitor the silylation process and factors affecting the silylation and etching processes are discussed.",

author = "Lee, {S. Ming} and Stephen Matuszczak and Fr{\'e}chet, {Jean M.J.} and Chester Lee and Yosef Shacham-Diamand",

year = "1994",

month = oct,

day = "1",

doi = "10.1021/cm00046a037",

language = "English (US)",

volume = "6",

pages = "1796--1802",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "AMER CHEMICAL SOC",

number = "10",

}

Gas-Phase Modification of Polymer Coatings: The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions. / Lee, S. Ming; Matuszczak, Stephen; Fréchet, Jean M.J. et al.
In: Chemistry of Materials, Vol. 6, No. 10, 01.10.1994, p. 1796-1802.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Gas-Phase Modification of Polymer Coatings

T2 - The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions

AU - Lee, S. Ming

AU - Matuszczak, Stephen

AU - Fréchet, Jean M.J.

AU - Lee, Chester

AU - Shacham-Diamand, Yosef

PY - 1994/10/1

Y1 - 1994/10/1

N2 - Image-tone reversal has been demonstrated with two chemically amplified resists through gas-phase silylation and dry development with oxygen plasma etching. Selective silylation of the radiation-exposed or unexposed portions of the resists has been achieved by two different approaches: (a) controlling the availability of the reactive groups; (b) varying the permeability of the resist material to the silylating reagent. Those areas of the resist films that are silylated resist oxygen plasma etching. This provides access to high-resolution images with the high sensitivity of the chemically amplified resists. Techniques useful to monitor the silylation process and factors affecting the silylation and etching processes are discussed.

AB - Image-tone reversal has been demonstrated with two chemically amplified resists through gas-phase silylation and dry development with oxygen plasma etching. Selective silylation of the radiation-exposed or unexposed portions of the resists has been achieved by two different approaches: (a) controlling the availability of the reactive groups; (b) varying the permeability of the resist material to the silylating reagent. Those areas of the resist films that are silylated resist oxygen plasma etching. This provides access to high-resolution images with the high sensitivity of the chemically amplified resists. Techniques useful to monitor the silylation process and factors affecting the silylation and etching processes are discussed.

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U2 - 10.1021/cm00046a037

DO - 10.1021/cm00046a037

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SN - 0897-4756

VL - 6

SP - 1796

EP - 1802

JO - Chemistry of Materials

JF - Chemistry of Materials

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ER -

Gas-Phase Modification of Polymer Coatings: The Use of Gas-Phase Silylation for Image-Tone Reversal of Chemically Amplified Photoresists Based on Electrophilic Addition Reactions

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