Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen; S. C. Song; C. S. Park; C. Burham; G. Bersuker; K. Choi; M. A. Quevedo-Lopez; B. S. Ju; H. N. Alshareef; H. Niimi; H. B. Park; P. S. Lysaght; P. Majhi; B. H. Lee; R. Jamrny

doi:10.1109/VLSIT.2007.4339766

Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

H. C. Wen^*, S. C. Song, C. S. Park, C. Burham, G. Bersuker, K. Choi, M. A. Quevedo-Lopez, B. S. Ju, H. N. Alshareef, H. Niimi, H. B. Park, P. S. Lysaght, P. Majhi, B. H. Lee, R. Jamrny

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

The effective work function (EWF) of ternary metalaluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (∼5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (V_t) of ∼ -0.35V, an equivalent oxide thickness (EOT)∼1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.

Original language	English (US)
Article number	4339766
Pages (from-to)	160-161
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339766
State	Published - 2007
Externally published	Yes
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: Jun 12 2007 → Jun 14 2007

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/VLSIT.2007.4339766

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Wen, H. C., Song, S. C., Park, C. S., Burham, C., Bersuker, G., Choi, K., Quevedo-Lopez, M. A., Ju, B. S., Alshareef, H. N., Niimi, H., Park, H. B., Lysaght, P. S., Majhi, P., Lee, B. H., & Jamrny, R. (2007). Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications. Digest of Technical Papers - Symposium on VLSI Technology, 160-161. Article 4339766. https://doi.org/10.1109/VLSIT.2007.4339766

@article{4462cb252f0646e6812b7953df46a6a1,

title = "Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications",

abstract = "The effective work function (EWF) of ternary metalaluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (∼5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (Vt) of ∼ -0.35V, an equivalent oxide thickness (EOT)∼1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.",

author = "Wen, {H. C.} and Song, {S. C.} and Park, {C. S.} and C. Burham and G. Bersuker and K. Choi and Quevedo-Lopez, {M. A.} and Ju, {B. S.} and Alshareef, {H. N.} and H. Niimi and Park, {H. B.} and Lysaght, {P. S.} and P. Majhi and Lee, {B. H.} and R. Jamrny",

year = "2007",

doi = "10.1109/VLSIT.2007.4339766",

language = "English (US)",

pages = "160--161",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

}

Wen, HC, Song, SC, Park, CS, Burham, C, Bersuker, G, Choi, K, Quevedo-Lopez, MA, Ju, BS, Alshareef, HN, Niimi, H, Park, HB, Lysaght, PS, Majhi, P, Lee, BH & Jamrny, R 2007, 'Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications', Digest of Technical Papers - Symposium on VLSI Technology, pp. 160-161. https://doi.org/10.1109/VLSIT.2007.4339766

TY - JOUR

T1 - Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

AU - Wen, H. C.

AU - Song, S. C.

AU - Park, C. S.

AU - Burham, C.

AU - Bersuker, G.

AU - Choi, K.

AU - Quevedo-Lopez, M. A.

AU - Ju, B. S.

AU - Alshareef, H. N.

AU - Niimi, H.

AU - Park, H. B.

AU - Lysaght, P. S.

AU - Majhi, P.

AU - Lee, B. H.

AU - Jamrny, R.

PY - 2007

Y1 - 2007

N2 - The effective work function (EWF) of ternary metalaluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (∼5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (Vt) of ∼ -0.35V, an equivalent oxide thickness (EOT)∼1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.

AB - The effective work function (EWF) of ternary metalaluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (∼5eV) by 250meV compared to the EWF of the binary metal nitride. Low threshold voltage (Vt) of ∼ -0.35V, an equivalent oxide thickness (EOT)∼1.2nm, and performance suitable for gate-first 32nm low standby power applications are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=37749040743&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2007.4339766

DO - 10.1109/VLSIT.2007.4339766

M3 - Conference article

AN - SCOPUS:37749040743

SN - 0743-1562

SP - 160

EP - 161

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339766

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

Y2 - 12 June 2007 through 14 June 2007

ER -

Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications

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