Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang; G. Louche; R. S. Duran; Y. Gnanou; S. J. Pearton; F. Ren

Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang^*, G. Louche, R. S. Duran, Y. Gnanou, S. J. Pearton, F. Ren

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Original language	English (US)
Pages	39-45
Number of pages	7
State	Published - 2004
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 9 2004 → May 14 2004

Other

Other	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	05/9/04 → 05/14/04

ASJC Scopus subject areas

General Engineering

Cite this

Kang, B. S., Louche, G., Duran, R. S., Gnanou, Y., Pearton, S. J., & Ren, F. (2004). Gateless AlGaN/GaN HEMT response to block co-polymers. 39-45. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

@conference{decc0697b55e494e8c45ed71346d4ea5,

title = "Gateless AlGaN/GaN HEMT response to block co-polymers",

abstract = "Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.",

author = "Kang, {B. S.} and G. Louche and Duran, {R. S.} and Y. Gnanou and Pearton, {S. J.} and F. Ren",

year = "2004",

language = "English (US)",

pages = "39--45",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Kang, BS, Louche, G, Duran, RS, Gnanou, Y, Pearton, SJ & Ren, F 2004, 'Gateless AlGaN/GaN HEMT response to block co-polymers', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 05/9/04 - 05/14/04 pp. 39-45.

Gateless AlGaN/GaN HEMT response to block co-polymers. / Kang, B. S.; Louche, G.; Duran, R. S. et al.
2004. 39-45 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Gateless AlGaN/GaN HEMT response to block co-polymers

AU - Kang, B. S.

AU - Louche, G.

AU - Duran, R. S.

AU - Gnanou, Y.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2004

Y1 - 2004

N2 - Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

AB - Gateless AlGaN/GaN high electron mobility transistor(HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

UR - http://www.scopus.com/inward/record.url?scp=5744250234&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744250234

SP - 39

EP - 45

T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Gateless AlGaN/GaN HEMT response to block co-polymers

Abstract

Other

ASJC Scopus subject areas

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